Improving Cu line Rs control using feed-forward information for CMP endpointing

A promising method for controlling sheet resistance (R s ) of Cu interconnect through improved chemical mechanical planarization (CMP) endpoint capability was developed using broadband spectrometry together with feed-forward information from upstream process conditions. With this new method, the waf...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Xiaoyuan Hu, Zhihong Wang, Wen-chiang Tu, Daxin Mao
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemical technology CMP Cu line sheet resistance Dielectric materials Dielectric measurements Electrical resistance measurement Etching Feedforward systems in-situ process control Libraries Process control Thickness control Thickness measurement white light endpoint
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