Improving Cu line Rs control using feed-forward information for CMP endpointing

Improving Cu line Rs control using feed-forward information for CMP endpointing

A promising method for controlling sheet resistance (R s ) of Cu interconnect through improved chemical mechanical planarization (CMP) endpoint capability was developed using broadband spectrometry together with feed-forward information from upstream process conditions. With this new method, the waf...

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Bibliographische Detailangaben
Hauptverfasser: Xiaoyuan Hu, Zhihong Wang, Wen-chiang Tu, Daxin Mao
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical technology
CMP
Cu line sheet resistance
Dielectric materials
Dielectric measurements
Electrical resistance measurement
Etching
Feedforward systems
in-situ process control
Libraries
Process control
Thickness control
Thickness measurement
white light endpoint
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Beschreibung
Zusammenfassung:A promising method for controlling sheet resistance (R s ) of Cu interconnect through improved chemical mechanical planarization (CMP) endpoint capability was developed using broadband spectrometry together with feed-forward information from upstream process conditions. With this new method, the wafer-to-wafer (WTW) R s range was reduced more than 50% compared to time-based CMP polish control.
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2010.5510306