Preparation of pyrolyzed a-C thin films using methane as precursor

Amorphous carbon thin films have been grown on quartz substrates by an economical and simple technique, thermal CVD system with methane as starting material. Since, the decomposition of methane required high thermal energy, thus the deposition temperatures were varied from 700-1000°C. The formation...

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Bibliographische Detailangaben
Hauptverfasser:	Mohamad, F, Hussin, H, Noor, U M, Rusop, M
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	amorphous carbon Amorphous materials Furnaces methane Optical films Plasma temperature pyrolysis Semiconductor thin films Sputtering Substrates thermal CVD Thermal decomposition Thin film devices Transistors
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Beschreibung
Zusammenfassung:	Amorphous carbon thin films have been grown on quartz substrates by an economical and simple technique, thermal CVD system with methane as starting material. Since, the decomposition of methane required high thermal energy, thus the deposition temperatures were varied from 700-1000°C. The formation of a-C thin films and its properties were characterized using UV-Vis Spectrophotometer and Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software.
ISSN:	2159-2047 2159-2055
DOI:	10.1109/ICEDSA.2010.5503032