Study of polarization properties of light emitted from tensile strained InGaN/AlInN quantum well

This paper discusses the optical polarization anisotropic of a c-plane InGaN/AlInN quantum well under the tensile strain. The calculation results indicate that with particular In composition of AlInN alloy for the tensile strain, it is possible to reduce the quantum-confined Stark effect and make an...

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Bibliographische Detailangaben
Hauptverfasser:	Po-Yuan Dang, Hung-Hsun Huang, Yuh-Renn Wu
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	(230.5440) Polarization-selective devices (250.5590) Quantum-well Capacitive sensors Diode lasers Gallium nitride Light emitting diodes Optical devices Optical polarization Piezoelectric polarization Stark effect Stimulated emission Tensile strain wire and -dot devices
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Zusammenfassung:	This paper discusses the optical polarization anisotropic of a c-plane InGaN/AlInN quantum well under the tensile strain. The calculation results indicate that with particular In composition of AlInN alloy for the tensile strain, it is possible to reduce the quantum-confined Stark effect and make an out-planed polarized light source for edge emitting laser diodes or light emitting diodes.