Modeling of a 10GHz SiGe HBT EO modulator

The modeling of an EO modulator based on SiGe Heterojunction Bipolar Transistor is presented. The device exhibits 10GHz switching speed with a π-phase shift length of 74μm. The total propagation loss is less than 4dB.

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Bibliographische Detailangaben
Hauptverfasser:	Shengling Deng, Neogi, Tuhin Guha, Novak, Joseph, McDonald, John, Huang, Z Rena
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	(130.3120) Integrated optics devices (130.4110) Modulator Doping profiles Electrooptic modulators Electrooptical waveguides Germanium silicon alloys Heterojunction bipolar transistors Optical devices Optical waveguides Semiconductor process modeling Silicon carbide Silicon germanium
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Beschreibung
Zusammenfassung:	The modeling of an EO modulator based on SiGe Heterojunction Bipolar Transistor is presented. The device exhibits 10GHz switching speed with a π-phase shift length of 74μm. The total propagation loss is less than 4dB.