Deep ultraviolet LEDs based on AlGaN alloys by plasma-assisted molecular beam epitaxy
We report the development of AlGaN-based deep UV LEDs by plasma-assisted molecular beam epitaxy, which at bare-die configuration have an output power of 1.3 mW at 200 mA and external quantum efficiency of 0.16%.
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Zusammenfassung: | We report the development of AlGaN-based deep UV LEDs by plasma-assisted molecular beam epitaxy, which at bare-die configuration have an output power of 1.3 mW at 200 mA and external quantum efficiency of 0.16%. |
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