Deep ultraviolet LEDs based on AlGaN alloys by plasma-assisted molecular beam epitaxy

We report the development of AlGaN-based deep UV LEDs by plasma-assisted molecular beam epitaxy, which at bare-die configuration have an output power of 1.3 mW at 200 mA and external quantum efficiency of 0.16%.

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Bibliographische Detailangaben
Hauptverfasser: Yitao Liao, Thomidis, Christos, Chen-kai Kao, Bellotti, Enrico, Moustakas, Theodore D
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We report the development of AlGaN-based deep UV LEDs by plasma-assisted molecular beam epitaxy, which at bare-die configuration have an output power of 1.3 mW at 200 mA and external quantum efficiency of 0.16%.