Development of novel carbon nanotube TSV technology

Development of novel carbon nanotube TSV technology

The design and development of reliable 3D integrated systems require high performance interconnects, which in turn are largely dependent on the choice of filler material used in TSV. Cu, W, and poly-silicon have been explored as filler materials; however, issues like thermal incompatibility, electro...

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Bibliographische Detailangaben
Hauptverfasser: Gupta, Anurag, Kannan, Sukeshwar, Kim, Bruce C, Mohammed, Falah, Byoungchul Ahn
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Carbon nanotubes
Conducting materials
Copper
Electromigration
Fabrication
Materials reliability
Packaging
Semiconductor materials
Space technology
Through-silicon vias
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Beschreibung
Zusammenfassung:The design and development of reliable 3D integrated systems require high performance interconnects, which in turn are largely dependent on the choice of filler material used in TSV. Cu, W, and poly-silicon have been explored as filler materials; however, issues like thermal incompatibility, electromigration and high resistivity are still a bottleneck. In this paper, we investigate SW-CNT bundles as a prospective filler material for TSV.
ISSN:0569-5503
2377-5726
DOI:10.1109/ECTC.2010.5490749