Vertical metal interconnect thanks to tungsten direct bonding

Vertical metal interconnect thanks to tungsten direct bonding

Localized metal bonding is one of the main drivers for 3D technology implementation as it allows high vertical interconnection densities between piled up dies. In this paper we will present the direct bonding of tungsten blanket. The copper and tungsten direct bonding will be compared in terms of bo...

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Bibliographische Detailangaben
Hauptverfasser: Di Cioccio, Léa, Gueguen, Pierric, Grouiller, Etienne, Vandroux, Laurent, Delaye, Vincent, Rivoire, Maurice, Lugand, Jean François, Clavelier, Laurent
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic force microscopy
Bonding forces
Copper
Pollution measurement
Rough surfaces
Surface roughness
Temperature dependence
Tin
Tungsten
Wafer bonding
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Beschreibung
Zusammenfassung:Localized metal bonding is one of the main drivers for 3D technology implementation as it allows high vertical interconnection densities between piled up dies. In this paper we will present the direct bonding of tungsten blanket. The copper and tungsten direct bonding will be compared in terms of bonding mechanism and temperature dependence.
ISSN:0569-5503
2377-5726
DOI:10.1109/ECTC.2010.5490643