A new step in GeOI pFET scaling and Off-State current reduction: 30nm gate length and record ION/IOFF ratio

A new step in GeOI pFET scaling and Off-State current reduction: 30nm gate length and record ION/IOFF ratio

We demonstrate the shortest Ge-channel pFETs reported to date (Lg=30 nm), on Ultra Thin GeOI obtained with the Ge enrichment technique. The Ion/Ioff ratio is raised to a record value of more than 5 decades thanks to the combination of a low defectivity, a thin Ge layer, well-controlled VΛ and SCE. T...

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Hauptverfasser: Hutin, L, Le Royer, C, Damlencourt, J.-F, Hartmann, J.-M, Grampeix, H, Mazzocchi, V, Arvet, C, Tabone, C, Previtali, B, Loup, V, Roure, M.-C, Pouydebasque, A, Lafond, D, Vinet, M, Clavelier, L, Faynot, O
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Annealing
Argon
Degradation
Delay
Doping
Germanium
Microstrip
Scalability
Silicon
Substrates
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Beschreibung
Zusammenfassung:We demonstrate the shortest Ge-channel pFETs reported to date (Lg=30 nm), on Ultra Thin GeOI obtained with the Ge enrichment technique. The Ion/Ioff ratio is raised to a record value of more than 5 decades thanks to the combination of a low defectivity, a thin Ge layer, well-controlled VΛ and SCE. This ratio could be even further improved using of germanidation, raised S/D, no channel doping, and decreasing the Ge film thickness in order to operate in full depletion at shorter gate lengths.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2010.5488958