Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology

High-K (HK) and Metal-Gate (MG) transistor reliability is very challenging both from the standpoint of introduction of new materials and requirement of higher field of operation for higher performance. In this paper, key and unique HK+MG intrinsic transistor reliability mechanisms observed on 32nm l...

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Hauptverfasser:	Sangwoo Pae, Ashok, Ashwin, Jingyoo Choi, Ghani, T, Jun He, Seok-hee Lee, Lemay, K, Liu, M, Lu, R, Packan, P, Parker, C, Purser, R, St. Amour, Anthony, Woolery, B
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Burn-in Capacitive sensors Electric breakdown Germanium silicon alloys High K dielectric materials high-k dielectrics High-K gate dielectrics Logic Materials reliability metal-gate transistor MOS devices process charging Silicon germanium TDDB and BTI Tunneling
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Beschreibung
Zusammenfassung:	High-K (HK) and Metal-Gate (MG) transistor reliability is very challenging both from the standpoint of introduction of new materials and requirement of higher field of operation for higher performance. In this paper, key and unique HK+MG intrinsic transistor reliability mechanisms observed on 32nm logic technology generation is presented. We'll present intrinsic reliability similar to or better than 45nm generation.
ISSN:	1541-7026 1938-1891
DOI:	10.1109/IRPS.2010.5488814