Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement

Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement

In this paper, we have investigated bulk trap and interface trap density (D it ) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is cri...

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Hauptverfasser: Sakoda, Tsunehisa, Nishigaya, Keita, Kubo, Tomohiro, Hori, Mitsuaki, Minakata, Hiroshi, Kobayashi, Yuko, Mori, Hiroko, Ono, Katsuji, Tanahashi, Katsuto, Tamura, Naoyoshi, Mori, Toshifumi, Tosaka, Yoshiharu, Matsuyama, Hideya, Kaneta, Chioko, Hashimoto, Koichi, Kase, Masataka, Nara, Yasuo
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Charge measurement
charge pumping
component
Current measurement
Dielectric measurements
Dit
flash lamp annealing
Fluctuations
gate current fluctuation
laser annealing
millisecond-anneal
MOSFET circuits
Niobium compounds
Random access memory
SRAM reliability
Temperature
Titanium compounds
V min
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Zusammenfassung:In this paper, we have investigated bulk trap and interface trap density (D it ) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of MOSFET.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2010.5488801