A simple electrical method for etch bias and process reliability determination

A simple electrical method for etch bias and process reliability determination

A fast and simple electrical method is developed to characterize the etch bias and post-patterned ILD breakdown strength of back-end-of-line (BEOL) interconnects, as well as the middle-of-line (MOL) contact/poly module. The method provides a timely and valuable monitoring mechanism for assessing lit...

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Bibliographische Detailangaben
Hauptverfasser: Kok-Yong Yiang, Chin, M, Marathe, A, Aubel, O
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical technology
CMOS technology
Dielectric breakdown
Electric breakdown
Etch bias
Etching
line-edge roughness (LER)
Lithography
Monitoring
Reliability engineering
Samarium
Testing
VRDB
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Beschreibung
Zusammenfassung:A fast and simple electrical method is developed to characterize the etch bias and post-patterned ILD breakdown strength of back-end-of-line (BEOL) interconnects, as well as the middle-of-line (MOL) contact/poly module. The method provides a timely and valuable monitoring mechanism for assessing lithography, etch, thin-film quality and process reliability windows.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2010.5488771