Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS
We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 10 13 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show t...
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| creator | Rodriguez, J Remack, K Gertas, J Wang, L Zhou, C Boku, K Rodriguez-Latorre, J Udayakumar, K R Summerfelt, S Moise, T Kim, D Groat, J Eliason, J Depner, M Chu, F |
| description | We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 10 13 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing. |
| doi_str_mv | 10.1109/IRPS.2010.5488738 |
| format | Conference Proceeding |
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Wear-out free endurance to 5.4 × 10 13 cycles and data retention equivalent of 10 years at 85°C is demonstrated. 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Wear-out free endurance to 5.4 × 10 13 cycles and data retention equivalent of 10 years at 85°C is demonstrated. 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Remack, K ; Gertas, J ; Wang, L ; Zhou, C ; Boku, K ; Rodriguez-Latorre, J ; Udayakumar, K R ; Summerfelt, S ; Moise, T ; Kim, D ; Groat, J ; Eliason, J ; Depner, M ; Chu, F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-7d0da5975756c2a72dd84bdedf978d6e2e2a22a59392268004ced56af30fa8283</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Capacitors</topic><topic>Circuits</topic><topic>Copper</topic><topic>cycling endurance</topic><topic>data retention</topic><topic>embedded memory</topic><topic>Ferroelectric films</topic><topic>Ferroelectric materials</topic><topic>ferroelectric memory reliability</topic><topic>high-temperature operating life</topic><topic>Intelligent sensors</topic><topic>Low voltage</topic><topic>Nonvolatile memory</topic><topic>Polarization</topic><topic>Random access memory</topic><topic>sof-error rate</topic><toplevel>online_resources</toplevel><creatorcontrib>Rodriguez, J</creatorcontrib><creatorcontrib>Remack, K</creatorcontrib><creatorcontrib>Gertas, J</creatorcontrib><creatorcontrib>Wang, L</creatorcontrib><creatorcontrib>Zhou, C</creatorcontrib><creatorcontrib>Boku, K</creatorcontrib><creatorcontrib>Rodriguez-Latorre, J</creatorcontrib><creatorcontrib>Udayakumar, K R</creatorcontrib><creatorcontrib>Summerfelt, S</creatorcontrib><creatorcontrib>Moise, T</creatorcontrib><creatorcontrib>Kim, D</creatorcontrib><creatorcontrib>Groat, J</creatorcontrib><creatorcontrib>Eliason, J</creatorcontrib><creatorcontrib>Depner, M</creatorcontrib><creatorcontrib>Chu, F</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rodriguez, J</au><au>Remack, K</au><au>Gertas, J</au><au>Wang, L</au><au>Zhou, C</au><au>Boku, K</au><au>Rodriguez-Latorre, J</au><au>Udayakumar, K R</au><au>Summerfelt, S</au><au>Moise, T</au><au>Kim, D</au><au>Groat, J</au><au>Eliason, J</au><au>Depner, M</au><au>Chu, F</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS</atitle><btitle>2010 IEEE International Reliability Physics Symposium</btitle><stitle>IRPS</stitle><date>2010-05</date><risdate>2010</risdate><spage>750</spage><epage>758</epage><pages>750-758</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>1424454301</isbn><isbn>9781424454303</isbn><eisbn>1424454298</eisbn><eisbn>9781424454297</eisbn><eisbn>9781424454310</eisbn><eisbn>142445431X</eisbn><abstract>We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 10 13 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.</abstract><pub>IEEE</pub><doi>10.1109/IRPS.2010.5488738</doi><tpages>9</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Capacitors Circuits Copper cycling endurance data retention embedded memory Ferroelectric films Ferroelectric materials ferroelectric memory reliability high-temperature operating life Intelligent sensors Low voltage Nonvolatile memory Polarization Random access memory sof-error rate |
| title | Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS |
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