Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 10 13 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show t...

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Hauptverfasser:	Rodriguez, J, Remack, K, Gertas, J, Wang, L, Zhou, C, Boku, K, Rodriguez-Latorre, J, Udayakumar, K R, Summerfelt, S, Moise, T, Kim, D, Groat, J, Eliason, J, Depner, M, Chu, F
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitors Circuits Copper cycling endurance data retention embedded memory Ferroelectric films Ferroelectric materials ferroelectric memory reliability high-temperature operating life Intelligent sensors Low voltage Nonvolatile memory Polarization Random access memory sof-error rate
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Zusammenfassung:	We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 10 13 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.
ISSN:	1541-7026 1938-1891
DOI:	10.1109/IRPS.2010.5488738