Novel 3-D stacked NAND flash string without body cross-talk effect

Novel 3-D stacked NAND flash string without body cross-talk effect

We have investigated I D -V GS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer. The body cross-talk problem was eliminated completely. We think proposed structure and its modification will be very promising candidate for future high density NAND...

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Hauptverfasser: Min-Kyu Jeong, Joo-Wan Lee, Ilwhan Cho, Byung-Gook Park, Hyung-Cheol Shin, Jong-Ho Lee
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Character generation
Doping
Etching
Flash memory
Germanium silicon alloys
Immune system
Silicon germanium
Temperature
Thermal stresses
Threshold voltage
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creator Min-Kyu Jeong
Joo-Wan Lee
Ilwhan Cho
Byung-Gook Park
Hyung-Cheol Shin
Jong-Ho Lee
description We have investigated I D -V GS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer. The body cross-talk problem was eliminated completely. We think proposed structure and its modification will be very promising candidate for future high density NAND flash memory.
doi_str_mv 10.1109/IMW.2010.5488410
format Conference Proceeding
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subjects Character generation
Doping
Etching
Flash memory
Germanium silicon alloys
Immune system
Silicon germanium
Temperature
Thermal stresses
Threshold voltage
title Novel 3-D stacked NAND flash string without body cross-talk effect
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