Novel 3-D stacked NAND flash string without body cross-talk effect

Novel 3-D stacked NAND flash string without body cross-talk effect

We have investigated I D -V GS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer. The body cross-talk problem was eliminated completely. We think proposed structure and its modification will be very promising candidate for future high density NAND...

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Bibliographische Detailangaben
Hauptverfasser: Min-Kyu Jeong, Joo-Wan Lee, Ilwhan Cho, Byung-Gook Park, Hyung-Cheol Shin, Jong-Ho Lee
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Character generation
Doping
Etching
Flash memory
Germanium silicon alloys
Immune system
Silicon germanium
Temperature
Thermal stresses
Threshold voltage
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Beschreibung
Zusammenfassung:We have investigated I D -V GS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer. The body cross-talk problem was eliminated completely. We think proposed structure and its modification will be very promising candidate for future high density NAND flash memory.
ISSN:2159-483X
DOI:10.1109/IMW.2010.5488410