Memristive Behavior in Thin Anodic Titania
A common material in creating memristors is titanium dioxide (TiO 2 ), grown by atomic layer deposition, sputtering, or sol-gel process. In this letter, we study the memristive behavior in thin TiO 2 films fabricated by brief electrochemical anodization of titanium. The effects of different anodizat...
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| Veröffentlicht in: | IEEE electron device letters 2010-07, Vol.31 (7), p.737-739 |
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| creator | Miller, Kyle Nalwa, Kanwar S Bergerud, Amy Neihart, Nathan M Chaudhary, Sumit |
| description | A common material in creating memristors is titanium dioxide (TiO 2 ), grown by atomic layer deposition, sputtering, or sol-gel process. In this letter, we study the memristive behavior in thin TiO 2 films fabricated by brief electrochemical anodization of titanium. The effects of different anodization times and annealing are explored. We discover that inherent oxygen-vacancies at the bottom Ti/TiO 2 interface naturally lead to memristive switching in nonannealed films. Annealing induces extra oxygen vacancies near the top metal/oxide interface, which leads to symmetric and ohmic current-voltage characteristics with a collapse of memristive switching. No clear dependence on anodization time was observed for times between 1 s and 1 min. |
| doi_str_mv | 10.1109/LED.2010.2049092 |
| format | Article |
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In this letter, we study the memristive behavior in thin TiO 2 films fabricated by brief electrochemical anodization of titanium. The effects of different anodization times and annealing are explored. We discover that inherent oxygen-vacancies at the bottom Ti/TiO 2 interface naturally lead to memristive switching in nonannealed films. Annealing induces extra oxygen vacancies near the top metal/oxide interface, which leads to symmetric and ohmic current-voltage characteristics with a collapse of memristive switching. No clear dependence on anodization time was observed for times between 1 s and 1 min.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2049092</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Annealing ; Anodic ; Anodizing ; Atomic layer deposition ; Biological materials ; Circuits ; Deposition ; Electrochemical anodization ; Fabrication ; Lead compounds ; memristor ; Memristors ; Oxides ; Sputtering ; Switching ; Titanium ; Titanium dioxide ; Voltage</subject><ispartof>IEEE electron device letters, 2010-07, Vol.31 (7), p.737-739</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jul 2010</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c365t-e2835770b38c324a34d2a7ea9de959422e104158916ef2a3015b69acfdf2f2a33</citedby><cites>FETCH-LOGICAL-c365t-e2835770b38c324a34d2a7ea9de959422e104158916ef2a3015b69acfdf2f2a33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5473038$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,782,786,798,27933,27934,54767</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5473038$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Miller, Kyle</creatorcontrib><creatorcontrib>Nalwa, Kanwar S</creatorcontrib><creatorcontrib>Bergerud, Amy</creatorcontrib><creatorcontrib>Neihart, Nathan M</creatorcontrib><creatorcontrib>Chaudhary, Sumit</creatorcontrib><title>Memristive Behavior in Thin Anodic Titania</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A common material in creating memristors is titanium dioxide (TiO 2 ), grown by atomic layer deposition, sputtering, or sol-gel process. In this letter, we study the memristive behavior in thin TiO 2 films fabricated by brief electrochemical anodization of titanium. The effects of different anodization times and annealing are explored. We discover that inherent oxygen-vacancies at the bottom Ti/TiO 2 interface naturally lead to memristive switching in nonannealed films. Annealing induces extra oxygen vacancies near the top metal/oxide interface, which leads to symmetric and ohmic current-voltage characteristics with a collapse of memristive switching. No clear dependence on anodization time was observed for times between 1 s and 1 min.</description><subject>Annealing</subject><subject>Anodic</subject><subject>Anodizing</subject><subject>Atomic layer deposition</subject><subject>Biological materials</subject><subject>Circuits</subject><subject>Deposition</subject><subject>Electrochemical anodization</subject><subject>Fabrication</subject><subject>Lead compounds</subject><subject>memristor</subject><subject>Memristors</subject><subject>Oxides</subject><subject>Sputtering</subject><subject>Switching</subject><subject>Titanium</subject><subject>Titanium dioxide</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1LAzEQhoMoWKt3wcuCB0HYOpkkm82x1voBFS_1HNLdWZrS7tZkW_Dfm1Lx4GWGgecdZh7GrjmMOAfzMJs-jRDShCANGDxhA65UmYMqxCkbgJY8FxyKc3YR4wqAS6nlgN2_0yb42Ps9ZY-0dHvfhcy32XyZyrjtal9lc9-71rtLdta4daSr3z5kn8_T-eQ1n328vE3Gs7wShepzwlIorWEhykqgdELW6DQ5U5NRRiISB8lVaXhBDToBXC0K46qmbvAwiyG7O-7dhu5rR7G3Gx8rWq9dS90uWq1EodM7RSJv_5GrbhfadJzlgBpRKo2JgiNVhS7GQI3dBr9x4TtB9uDOJnf24M7-ukuRm2PEE9EfrqQWIErxA00WZyk</recordid><startdate>201007</startdate><enddate>201007</enddate><creator>Miller, Kyle</creator><creator>Nalwa, Kanwar S</creator><creator>Bergerud, Amy</creator><creator>Neihart, Nathan M</creator><creator>Chaudhary, Sumit</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>201007</creationdate><title>Memristive Behavior in Thin Anodic Titania</title><author>Miller, Kyle ; Nalwa, Kanwar S ; Bergerud, Amy ; Neihart, Nathan M ; Chaudhary, Sumit</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-e2835770b38c324a34d2a7ea9de959422e104158916ef2a3015b69acfdf2f2a33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Annealing</topic><topic>Anodic</topic><topic>Anodizing</topic><topic>Atomic layer deposition</topic><topic>Biological materials</topic><topic>Circuits</topic><topic>Deposition</topic><topic>Electrochemical anodization</topic><topic>Fabrication</topic><topic>Lead compounds</topic><topic>memristor</topic><topic>Memristors</topic><topic>Oxides</topic><topic>Sputtering</topic><topic>Switching</topic><topic>Titanium</topic><topic>Titanium dioxide</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miller, Kyle</creatorcontrib><creatorcontrib>Nalwa, Kanwar S</creatorcontrib><creatorcontrib>Bergerud, Amy</creatorcontrib><creatorcontrib>Neihart, Nathan M</creatorcontrib><creatorcontrib>Chaudhary, Sumit</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Miller, Kyle</au><au>Nalwa, Kanwar S</au><au>Bergerud, Amy</au><au>Neihart, Nathan M</au><au>Chaudhary, Sumit</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Memristive Behavior in Thin Anodic Titania</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2010-07</date><risdate>2010</risdate><volume>31</volume><issue>7</issue><spage>737</spage><epage>739</epage><pages>737-739</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A common material in creating memristors is titanium dioxide (TiO 2 ), grown by atomic layer deposition, sputtering, or sol-gel process. In this letter, we study the memristive behavior in thin TiO 2 films fabricated by brief electrochemical anodization of titanium. The effects of different anodization times and annealing are explored. We discover that inherent oxygen-vacancies at the bottom Ti/TiO 2 interface naturally lead to memristive switching in nonannealed films. Annealing induces extra oxygen vacancies near the top metal/oxide interface, which leads to symmetric and ohmic current-voltage characteristics with a collapse of memristive switching. No clear dependence on anodization time was observed for times between 1 s and 1 min.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2010.2049092</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Annealing Anodic Anodizing Atomic layer deposition Biological materials Circuits Deposition Electrochemical anodization Fabrication Lead compounds memristor Memristors Oxides Sputtering Switching Titanium Titanium dioxide Voltage |
| title | Memristive Behavior in Thin Anodic Titania |
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