Memristive Behavior in Thin Anodic Titania

Memristive Behavior in Thin Anodic Titania

A common material in creating memristors is titanium dioxide (TiO 2 ), grown by atomic layer deposition, sputtering, or sol-gel process. In this letter, we study the memristive behavior in thin TiO 2 films fabricated by brief electrochemical anodization of titanium. The effects of different anodizat...

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Veröffentlicht in:IEEE electron device letters 2010-07, Vol.31 (7), p.737-739
Hauptverfasser: Miller, Kyle, Nalwa, Kanwar S, Bergerud, Amy, Neihart, Nathan M, Chaudhary, Sumit
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Anodic
Anodizing
Atomic layer deposition
Biological materials
Circuits
Deposition
Electrochemical anodization
Fabrication
Lead compounds
memristor
Memristors
Oxides
Sputtering
Switching
Titanium
Titanium dioxide
Voltage
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Beschreibung
Zusammenfassung:A common material in creating memristors is titanium dioxide (TiO 2 ), grown by atomic layer deposition, sputtering, or sol-gel process. In this letter, we study the memristive behavior in thin TiO 2 films fabricated by brief electrochemical anodization of titanium. The effects of different anodization times and annealing are explored. We discover that inherent oxygen-vacancies at the bottom Ti/TiO 2 interface naturally lead to memristive switching in nonannealed films. Annealing induces extra oxygen vacancies near the top metal/oxide interface, which leads to symmetric and ohmic current-voltage characteristics with a collapse of memristive switching. No clear dependence on anodization time was observed for times between 1 s and 1 min.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2049092