Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies
A novel on-chip test circuit to measure single-event-induced charge sharing has been developed and implemented in an IBM 90 nm process. Test measurements with Two-Photon Absorption (TPA) backside laser irradiation helps demonstrate the effectiveness of the test circuit in characterizing charge shari...
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| creator | Amusan, O A Bhuva, B L Casey, M C Gadlage, M J McMorrow, D Melinger, J S Massengill, L W |
| description | A novel on-chip test circuit to measure single-event-induced charge sharing has been developed and implemented in an IBM 90 nm process. Test measurements with Two-Photon Absorption (TPA) backside laser irradiation helps demonstrate the effectiveness of the test circuit in characterizing charge sharing effects for sub-100 nm bulk CMOS processes. |
| doi_str_mv | 10.1109/ICMTS.2010.5466844 |
| format | Conference Proceeding |
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| identifier | ISSN: 1071-9032 |
| ispartof | 2010 International Conference on Microelectronic Test Structures (ICMTS), 2010, p.114-117 |
| issn | 1071-9032 2158-1029 |
| language | eng |
| recordid | cdi_ieee_primary_5466844 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Absorption charge collection Charge measurement charge sharing Circuit testing CMOS process CMOS technology Current measurement Error analysis Microelectronics on-chip test circuit Particle measurements single event circuit characterization Transistors two-photon absorption |
| title | Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies |
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