Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies

Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies

A novel on-chip test circuit to measure single-event-induced charge sharing has been developed and implemented in an IBM 90 nm process. Test measurements with Two-Photon Absorption (TPA) backside laser irradiation helps demonstrate the effectiveness of the test circuit in characterizing charge shari...

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Bibliographische Detailangaben
Hauptverfasser: Amusan, O A, Bhuva, B L, Casey, M C, Gadlage, M J, McMorrow, D, Melinger, J S, Massengill, L W
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
charge collection
Charge measurement
charge sharing
Circuit testing
CMOS process
CMOS technology
Current measurement
Error analysis
Microelectronics
on-chip test circuit
Particle measurements
single event circuit characterization
Transistors
two-photon absorption
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Beschreibung
Zusammenfassung:A novel on-chip test circuit to measure single-event-induced charge sharing has been developed and implemented in an IBM 90 nm process. Test measurements with Two-Photon Absorption (TPA) backside laser irradiation helps demonstrate the effectiveness of the test circuit in characterizing charge sharing effects for sub-100 nm bulk CMOS processes.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2010.5466844