An Interconnect-Line-Size Optimization Model Considering Scattering Effect

Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and lin...

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Veröffentlicht in:IEEE electron device letters 2010-07, Vol.31 (7), p.641-643
Hauptverfasser: Zhu, Zhangming, Wan, Dajing, Yang, Yintang
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Wan, Dajing
Yang, Yintang
description Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and line spacing by the curve-fitting method. The proposed model has been verified and compared for nanoscale CMOS technology. The optimization model is simple, and we can apply it to the interconnect system optimal design of nano-CMOS integrated circuits.
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_5466091</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5466091</ieee_id><sourcerecordid>2717187581</sourcerecordid><originalsourceid>FETCH-LOGICAL-c323t-831e51c552446bba7b518d657ae6581fd904cbe50035f38c485200ccb3d693f83</originalsourceid><addsrcrecordid>eNpdkE1Lw0AQhhdRsFbvgpeAB0-ps9_JsdSqlUgP1XNINhPZku7W3fRgf70pLR48zTvwvMPwEHJLYUIp5I_F_GnCYNgYCM14dkZGVMosBan4ORmBFjTlFNQluYpxDUCF0GJE3qYuWbgeg_HOoenTwjpMV3aPyXLb243dV731Lnn3DXbJzLtoGwzWfSUrU_X9Mc7bdqhek4u26iLenOaYfD7PP2avabF8WcymRWo4432acYqSGimZEKquK11LmjVK6gqVzGjb5CBMjRKAy5ZnRmSSARhT80blvM34mDwc726D_95h7MuNjQa7rnLod7HUkiudK6YH8v4fufa74IbnSgpMMyakOlBwpEzwMQZsy22wmyr8DFB5cFsObsuD2_LkdqjcHSsWEf9wKZSCnPJfKAFzVA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1027224567</pqid></control><display><type>article</type><title>An Interconnect-Line-Size Optimization Model Considering Scattering Effect</title><source>IEEE Electronic Library (IEL)</source><creator>Zhu, Zhangming ; Wan, Dajing ; Yang, Yintang</creator><creatorcontrib>Zhu, Zhangming ; Wan, Dajing ; Yang, Yintang</creatorcontrib><description>Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and line spacing by the curve-fitting method. The proposed model has been verified and compared for nanoscale CMOS technology. The optimization model is simple, and we can apply it to the interconnect system optimal design of nano-CMOS integrated circuits.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2047238</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Analytical models ; Bandwidth ; CMOS ; CMOS technology ; Curve fitting ; Delay ; Integrated circuit interconnections ; Integrated circuit modeling ; interconnect line size ; latency ; Mathematical analysis ; Nanocomposites ; Nanomaterials ; Nanostructure ; Optimization ; Optimization methods ; Scattering ; scattering effect ; Semiconductor device modeling</subject><ispartof>IEEE electron device letters, 2010-07, Vol.31 (7), p.641-643</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jul 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-831e51c552446bba7b518d657ae6581fd904cbe50035f38c485200ccb3d693f83</citedby><cites>FETCH-LOGICAL-c323t-831e51c552446bba7b518d657ae6581fd904cbe50035f38c485200ccb3d693f83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5466091$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5466091$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhu, Zhangming</creatorcontrib><creatorcontrib>Wan, Dajing</creatorcontrib><creatorcontrib>Yang, Yintang</creatorcontrib><title>An Interconnect-Line-Size Optimization Model Considering Scattering Effect</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and line spacing by the curve-fitting method. The proposed model has been verified and compared for nanoscale CMOS technology. The optimization model is simple, and we can apply it to the interconnect system optimal design of nano-CMOS integrated circuits.</description><subject>Analytical models</subject><subject>Bandwidth</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Curve fitting</subject><subject>Delay</subject><subject>Integrated circuit interconnections</subject><subject>Integrated circuit modeling</subject><subject>interconnect line size</subject><subject>latency</subject><subject>Mathematical analysis</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Optimization</subject><subject>Optimization methods</subject><subject>Scattering</subject><subject>scattering effect</subject><subject>Semiconductor device modeling</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhhdRsFbvgpeAB0-ps9_JsdSqlUgP1XNINhPZku7W3fRgf70pLR48zTvwvMPwEHJLYUIp5I_F_GnCYNgYCM14dkZGVMosBan4ORmBFjTlFNQluYpxDUCF0GJE3qYuWbgeg_HOoenTwjpMV3aPyXLb243dV731Lnn3DXbJzLtoGwzWfSUrU_X9Mc7bdqhek4u26iLenOaYfD7PP2avabF8WcymRWo4432acYqSGimZEKquK11LmjVK6gqVzGjb5CBMjRKAy5ZnRmSSARhT80blvM34mDwc726D_95h7MuNjQa7rnLod7HUkiudK6YH8v4fufa74IbnSgpMMyakOlBwpEzwMQZsy22wmyr8DFB5cFsObsuD2_LkdqjcHSsWEf9wKZSCnPJfKAFzVA</recordid><startdate>201007</startdate><enddate>201007</enddate><creator>Zhu, Zhangming</creator><creator>Wan, Dajing</creator><creator>Yang, Yintang</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>201007</creationdate><title>An Interconnect-Line-Size Optimization Model Considering Scattering Effect</title><author>Zhu, Zhangming ; Wan, Dajing ; Yang, Yintang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-831e51c552446bba7b518d657ae6581fd904cbe50035f38c485200ccb3d693f83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Analytical models</topic><topic>Bandwidth</topic><topic>CMOS</topic><topic>CMOS technology</topic><topic>Curve fitting</topic><topic>Delay</topic><topic>Integrated circuit interconnections</topic><topic>Integrated circuit modeling</topic><topic>interconnect line size</topic><topic>latency</topic><topic>Mathematical analysis</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Optimization</topic><topic>Optimization methods</topic><topic>Scattering</topic><topic>scattering effect</topic><topic>Semiconductor device modeling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Zhangming</creatorcontrib><creatorcontrib>Wan, Dajing</creatorcontrib><creatorcontrib>Yang, Yintang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhu, Zhangming</au><au>Wan, Dajing</au><au>Yang, Yintang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An Interconnect-Line-Size Optimization Model Considering Scattering Effect</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2010-07</date><risdate>2010</risdate><volume>31</volume><issue>7</issue><spage>641</spage><epage>643</epage><pages>641-643</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and line spacing by the curve-fitting method. The proposed model has been verified and compared for nanoscale CMOS technology. The optimization model is simple, and we can apply it to the interconnect system optimal design of nano-CMOS integrated circuits.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2010.2047238</doi><tpages>3</tpages></addata></record>
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subjects Analytical models
Bandwidth
CMOS
CMOS technology
Curve fitting
Delay
Integrated circuit interconnections
Integrated circuit modeling
interconnect line size
latency
Mathematical analysis
Nanocomposites
Nanomaterials
Nanostructure
Optimization
Optimization methods
Scattering
scattering effect
Semiconductor device modeling
title An Interconnect-Line-Size Optimization Model Considering Scattering Effect
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T00%3A52%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20Interconnect-Line-Size%20Optimization%20Model%20Considering%20Scattering%20Effect&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Zhu,%20Zhangming&rft.date=2010-07&rft.volume=31&rft.issue=7&rft.spage=641&rft.epage=643&rft.pages=641-643&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2010.2047238&rft_dat=%3Cproquest_RIE%3E2717187581%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1027224567&rft_id=info:pmid/&rft_ieee_id=5466091&rfr_iscdi=true