An Interconnect-Line-Size Optimization Model Considering Scattering Effect

Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and lin...

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Veröffentlicht in:IEEE electron device letters 2010-07, Vol.31 (7), p.641-643
Hauptverfasser: Zhu, Zhangming, Wan, Dajing, Yang, Yintang
Format: Artikel
Sprache:eng
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Zusammenfassung:Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and line spacing by the curve-fitting method. The proposed model has been verified and compared for nanoscale CMOS technology. The optimization model is simple, and we can apply it to the interconnect system optimal design of nano-CMOS integrated circuits.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2047238