A fully packaged piezoelectric switch with lowvoltage actuation and electrostatic hold

A fully packaged piezoelectric switch with lowvoltage actuation and electrostatic hold

This paper reports RF characterization of a fully packaged RF MEMS piezoelectric switch. The switch demonstrates better than 0.8 dB insertion loss at 2 GHz and 30 dB isolation up to 10 GHz. The presented device combines a piezoelectric actuation and a low electrostatic hold voltage to improve contac...

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Hauptverfasser: Cueff, Matthieu, Defay, Emmanuel, Rey, Patrice, Le Rhun, Gwenael, Perruchot, Franois, Ferrandon, Christine, Mercier, Denis, Domingue, Frederic, Suhm, Aurelien, Aid, Marc, Lianjiu Liu, Pacheco, Sergio, Miller, Mel
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Contact resistance
Electrostatics
Insertion loss
Low voltage
Packaging
Radio frequency
Radiofrequency microelectromechanical systems
Switches
Wafer bonding
Wafer scale integration
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Beschreibung
Zusammenfassung:This paper reports RF characterization of a fully packaged RF MEMS piezoelectric switch. The switch demonstrates better than 0.8 dB insertion loss at 2 GHz and 30 dB isolation up to 10 GHz. The presented device combines a piezoelectric actuation and a low electrostatic hold voltage to improve contact force. Actuation voltages of the switch are 5 V for both piezoelectric actuation and electrostatic hold. This actuation was sufficient to obtain contact resistance lower than 2 ohms. The switch is packaged by wafer-level packaging technology using gap control, AuSn eutectic bonding and post-process Thru-Silicon Vias.
ISSN:1084-6999
DOI:10.1109/MEMSYS.2010.5442529