Feasibilty of laser action in strained Ge and Group IV alloys on Si platform

Feasibilty of laser action in strained Ge and Group IV alloys on Si platform

Group IV elements and their alloys show poor light emission due to their indirect gap. Application of tensile strain in Ge lowers the ¿ valley below the L valleys in bulk as well as in Ge nanowires. We present also our results on direct gap type I alignment showing direct gap at ~ 0.8 eV in Si 1-p-q...

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Bibliographische Detailangaben
Hauptverfasser: Basu, P K, Sen, Gopa, Mukhopadhyay, Bratati
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Charge carrier density
Direct gap
Gain
GeC-GeSiSn Heterojunction
Germanium alloys
Interpolation
Laser
Nanowires
Silicon alloys
Strained GeC alloy
Tensile strain
Threshold current
Tin
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Zusammenfassung:Group IV elements and their alloys show poor light emission due to their indirect gap. Application of tensile strain in Ge lowers the ¿ valley below the L valleys in bulk as well as in Ge nanowires. We present also our results on direct gap type I alignment showing direct gap at ~ 0.8 eV in Si 1-p-q Ge p C q (C
DOI:10.1109/ELECTRO.2009.5441070