Non Destructive Electrical Characterization of Semiconducting Layers by a Novel Microwave Method

Non Destructive Electrical Characterization of Semiconducting Layers by a Novel Microwave Method

We propose a microwave device using a novel cell which allows one to measure the sheet resistance (R□), the carrier density (n) and the mobility (μ) of epitaxial layers. The electrical contacts between the sample and the cell are capacitive. The method is non-destructive and doesn't require any...

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Hauptverfasser: Tabourier, P., Druon, C., Bourzgui, N., Wacrenier, J.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier density
Contacts
Density measurement
Electric resistance
Electrical resistance measurement
Epitaxial layers
Microwave devices
Microwave measurements
Microwave theory and techniques
Semiconductivity
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Zusammenfassung:We propose a microwave device using a novel cell which allows one to measure the sheet resistance (R□), the carrier density (n) and the mobility (μ) of epitaxial layers. The electrical contacts between the sample and the cell are capacitive. The method is non-destructive and doesn't require any technological process. Measurements can be performed within the following ranges : 5 Ω ≪ R□ ≪ 2500 Ω; 100 cm 2 /V.s. ≪ μ ; 5 10 15 cm -3 ≪ n ≪ 5 10 18 cm -3
DOI:10.1007/978-3-642-52314-4_194