Design and Characterisation of High-Performance 0.13 μm NMOS Devices

Design and Characterisation of High-Performance 0.13 μm NMOS Devices

We report on the design, manufacturing and performance of NMOS transistors optimised or an effective channel length of 0.13 μm. The influence of the gate oxide thickness and pocket implants to device performance was studied. Pocket implanted devices show a high drive current (530 μA/μm at 1.8 V) and...

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Bibliographische Detailangaben
Hauptverfasser: Schmitz, J., Paulzen, G. M., Gravesteijn, D. J., Montree, A. H., Woerlee, P. H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Boron
Design optimization
Dielectric materials
Etching
High-K gate dielectrics
Implants
Laboratories
Manufacturing
MOS devices
MOSFETs
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Zusammenfassung:We report on the design, manufacturing and performance of NMOS transistors optimised or an effective channel length of 0.13 μm. The influence of the gate oxide thickness and pocket implants to device performance was studied. Pocket implanted devices show a high drive current (530 μA/μm at 1.8 V) and low off-current, with good suppression of short channel effects and a lifetime of 10 years at 1.8 V.