Multipolar Plasma Treatments of In0.53Ga0.47As Surface for MIS Devices Application
Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si 3 N 4 interfaces. Interface states density in the low 10 11 cm -2 eV -1 are obtained under controlled conditions, which is therefore suita...
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| creator | Renaud, M. Boher, P. Barrier, J. Schneider, J. Chane, J. P. |
| description | Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si 3 N 4 interfaces. Interface states density in the low 10 11 cm -2 eV -1 are obtained under controlled conditions, which is therefore suitable for a MISFET technology. |
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P.</creator><creatorcontrib>Renaud, M. ; Boher, P. ; Barrier, J. ; Schneider, J. ; Chane, J. P.</creatorcontrib><description>Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si 3 N 4 interfaces. Interface states density in the low 10 11 cm -2 eV -1 are obtained under controlled conditions, which is therefore suitable for a MISFET technology.</description><identifier>ISBN: 0444704779</identifier><identifier>ISBN: 9780444704771</identifier><language>eng</language><publisher>IEEE</publisher><subject>FETs ; Indium gallium arsenide ; Insulation ; MISFETs ; Optical surface waves ; Passivation ; Plasma applications ; Plasma devices ; Surface treatment ; Vacuum systems</subject><ispartof>ESSDERC '87: 17th European Solid State Device Research Conference, 1987, p.129-133</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5437017$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5437017$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Renaud, M.</creatorcontrib><creatorcontrib>Boher, P.</creatorcontrib><creatorcontrib>Barrier, J.</creatorcontrib><creatorcontrib>Schneider, J.</creatorcontrib><creatorcontrib>Chane, J. P.</creatorcontrib><title>Multipolar Plasma Treatments of In0.53Ga0.47As Surface for MIS Devices Application</title><title>ESSDERC '87: 17th European Solid State Device Research Conference</title><addtitle>ESSDERC</addtitle><description>Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si 3 N 4 interfaces. Interface states density in the low 10 11 cm -2 eV -1 are obtained under controlled conditions, which is therefore suitable for a MISFET technology.</description><subject>FETs</subject><subject>Indium gallium arsenide</subject><subject>Insulation</subject><subject>MISFETs</subject><subject>Optical surface waves</subject><subject>Passivation</subject><subject>Plasma applications</subject><subject>Plasma devices</subject><subject>Surface treatment</subject><subject>Vacuum systems</subject><isbn>0444704779</isbn><isbn>9780444704771</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1987</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotzM9KAzEQgPGACGrtE3jJC2yZbiZN9rhUrQstit17mY4TiOw_kq3g2yvod_ndvit1B4joAJ2rbtQy50_4DQ0aC7fq_XDp5jiNHSX91lHuSbdJaO5lmLMeg24GWFmzI1ihq7M-XlIgFh3GpA_NUT_KV2TJup6mLjLNcRzu1XWgLsvy34Vqn5_a7Uuxf90123pfxArmoip5E0wZ2J_JQ-lpzcDWIgUOtvowIISenfd2A2gxyNn5wC5QtbbIHs1CPfxto4icphR7St8ni8bB2pkf-cFGvw</recordid><startdate>198709</startdate><enddate>198709</enddate><creator>Renaud, M.</creator><creator>Boher, P.</creator><creator>Barrier, J.</creator><creator>Schneider, J.</creator><creator>Chane, J. P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>198709</creationdate><title>Multipolar Plasma Treatments of In0.53Ga0.47As Surface for MIS Devices Application</title><author>Renaud, M. ; Boher, P. ; Barrier, J. ; Schneider, J. ; Chane, J. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-92c6f32fc8ba8028a1c0c554afcf59d30ea48c788560454feb78fc7fa9154c843</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1987</creationdate><topic>FETs</topic><topic>Indium gallium arsenide</topic><topic>Insulation</topic><topic>MISFETs</topic><topic>Optical surface waves</topic><topic>Passivation</topic><topic>Plasma applications</topic><topic>Plasma devices</topic><topic>Surface treatment</topic><topic>Vacuum systems</topic><toplevel>online_resources</toplevel><creatorcontrib>Renaud, M.</creatorcontrib><creatorcontrib>Boher, P.</creatorcontrib><creatorcontrib>Barrier, J.</creatorcontrib><creatorcontrib>Schneider, J.</creatorcontrib><creatorcontrib>Chane, J. P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Renaud, M.</au><au>Boher, P.</au><au>Barrier, J.</au><au>Schneider, J.</au><au>Chane, J. P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Multipolar Plasma Treatments of In0.53Ga0.47As Surface for MIS Devices Application</atitle><btitle>ESSDERC '87: 17th European Solid State Device Research Conference</btitle><stitle>ESSDERC</stitle><date>1987-09</date><risdate>1987</risdate><spage>129</spage><epage>133</epage><pages>129-133</pages><isbn>0444704779</isbn><isbn>9780444704771</isbn><abstract>Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si 3 N 4 interfaces. Interface states density in the low 10 11 cm -2 eV -1 are obtained under controlled conditions, which is therefore suitable for a MISFET technology.</abstract><pub>IEEE</pub><tpages>5</tpages></addata></record> |
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| identifier | ISBN: 0444704779 |
| ispartof | ESSDERC '87: 17th European Solid State Device Research Conference, 1987, p.129-133 |
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| language | eng |
| recordid | cdi_ieee_primary_5437017 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | FETs Indium gallium arsenide Insulation MISFETs Optical surface waves Passivation Plasma applications Plasma devices Surface treatment Vacuum systems |
| title | Multipolar Plasma Treatments of In0.53Ga0.47As Surface for MIS Devices Application |
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