Multipolar Plasma Treatments of In0.53Ga0.47As Surface for MIS Devices Application

Multipolar Plasma Treatments of In0.53Ga0.47As Surface for MIS Devices Application

Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si 3 N 4 interfaces. Interface states density in the low 10 11 cm -2 eV -1 are obtained under controlled conditions, which is therefore suita...

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Bibliographische Detailangaben
Hauptverfasser: Renaud, M., Boher, P., Barrier, J., Schneider, J., Chane, J. P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
FETs
Indium gallium arsenide
Insulation
MISFETs
Optical surface waves
Passivation
Plasma applications
Plasma devices
Surface treatment
Vacuum systems
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Zusammenfassung:Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si 3 N 4 interfaces. Interface states density in the low 10 11 cm -2 eV -1 are obtained under controlled conditions, which is therefore suitable for a MISFET technology.