Multipolar Plasma Treatments of In0.53Ga0.47As Surface for MIS Devices Application
Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si 3 N 4 interfaces. Interface states density in the low 10 11 cm -2 eV -1 are obtained under controlled conditions, which is therefore suita...
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Zusammenfassung: | Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si 3 N 4 interfaces. Interface states density in the low 10 11 cm -2 eV -1 are obtained under controlled conditions, which is therefore suitable for a MISFET technology. |
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