Low Threshold BH Lasers Emitting at 1.5 μm Made from Gas Source MBE Heterostructures

Low Threshold BH Lasers Emitting at 1.5 μm Made from Gas Source MBE Heterostructures

Buried heterostructures (BH) lasers are made from low threshold current density (1.7 kA/cm 2 at 1.5μm) GaInAsP/InP double heterostucture (DH) grown by Gas Source Molecular Beam Epitaxy (GSMBE) and using a standard LPE regrowth fabrication process. Low threshold current (25 mA), high quantum differen...

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Bibliographische Detailangaben
Hauptverfasser: Fernier, B., Goldstein, L., Bonnevie, D., Sigogne, D., Benoit, J., Carriere, C., Lavolee, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aging
DH-HEMTs
Epitaxial layers
Gas lasers
Indium phosphide
Laser stability
Molecular beam epitaxial growth
Optical device fabrication
Testing
Threshold current
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Zusammenfassung:Buried heterostructures (BH) lasers are made from low threshold current density (1.7 kA/cm 2 at 1.5μm) GaInAsP/InP double heterostucture (DH) grown by Gas Source Molecular Beam Epitaxy (GSMBE) and using a standard LPE regrowth fabrication process. Low threshold current (25 mA), high quantum differential efficiency (43%) BH lasers emitting at 1.5μm have been obtained. Due to the very good homogeneity in thickness and composition of the epitaxial layers over a 2" diameter GSMBE wafer, the dispersion of the useful laser parameters is very low (± 6 mA for threshold current, ± 5 % for differential efficiency, ± 3 nm for wavelength). These lasers exhibit a stable behaviour on preliminary aging test.