Statistical Measurements of PMOS Subthreshold Current for 1.3 to 0.5 Micron Channel Lengths

Statistical Measurements of PMOS Subthreshold Current for 1.3 to 0.5 Micron Channel Lengths

The threshold voltage and subthreshold current of micron and submicron PMOS devices have been investigated for both a classical n - well and a retrograde n - well process. The two processes show similar threshold voltage characteristics down to 0.5 micron but the subthreshold current is much improve...

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Hauptverfasser: d'Ouville, T. Ternisien, Basset, R., Amm, D.T., Ravezzani, S., Delpech, P., Moi, D., Paoli, M., Minghetti, B., Mingam, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Boron
Current measurement
Degradation
Implants
Length measurement
MOS devices
Subthreshold current
Temperature
Threshold voltage
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Zusammenfassung:The threshold voltage and subthreshold current of micron and submicron PMOS devices have been investigated for both a classical n - well and a retrograde n - well process. The two processes show similar threshold voltage characteristics down to 0.5 micron but the subthreshold current is much improved for the retrograde process.