Narrow-width Effects in Submicron MOS ICs
The effects of an (almost) birds beak free LOCOS isolation configuration on the charactcristics of narrow-width MOSFETs has been investigated by 2-D device simulation and measurements of realized structures. Owing to the occurrence of excess inversion charge peaks at the LOCOS corners, an anomalous...
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| creator | Klaassen, F.M. van der Plas, P.A. Debets, R.J.W. Wils, N.A.H. Pitt, M.G. |
| description | The effects of an (almost) birds beak free LOCOS isolation configuration on the charactcristics of narrow-width MOSFETs has been investigated by 2-D device simulation and measurements of realized structures. Owing to the occurrence of excess inversion charge peaks at the LOCOS corners, an anomalous behaviour of the subthreshold characteristics and the threshold voltage is observed for device widths smaller than 1 μm. In addition a change of the birds beak length with the active area width results in a nonlinear dependence of the gain factor. |
| doi_str_mv | 10.1007/978-3-642-52314-4_21 |
| format | Conference Proceeding |
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Owing to the occurrence of excess inversion charge peaks at the LOCOS corners, an anomalous behaviour of the subthreshold characteristics and the threshold voltage is observed for device widths smaller than 1 μm. In addition a change of the birds beak length with the active area width results in a nonlinear dependence of the gain factor.</description><identifier>ISBN: 9780387510002</identifier><identifier>ISBN: 0387510001</identifier><identifier>DOI: 10.1007/978-3-642-52314-4_21</identifier><language>eng</language><publisher>IEEE</publisher><subject>Area measurement ; Birds ; Charge measurement ; Current measurement ; Gain measurement ; Length measurement ; MOSFETs ; Nanoscale devices ; Programmable logic arrays ; Shape measurement</subject><ispartof>ESSDERC '89: 19th European Solid State Device Research Conference, 1989, p.105-108</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5436657$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5436657$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Klaassen, F.M.</creatorcontrib><creatorcontrib>van der Plas, P.A.</creatorcontrib><creatorcontrib>Debets, R.J.W.</creatorcontrib><creatorcontrib>Wils, N.A.H.</creatorcontrib><creatorcontrib>Pitt, M.G.</creatorcontrib><title>Narrow-width Effects in Submicron MOS ICs</title><title>ESSDERC '89: 19th European Solid State Device Research Conference</title><addtitle>ESSDERC</addtitle><description>The effects of an (almost) birds beak free LOCOS isolation configuration on the charactcristics of narrow-width MOSFETs has been investigated by 2-D device simulation and measurements of realized structures. Owing to the occurrence of excess inversion charge peaks at the LOCOS corners, an anomalous behaviour of the subthreshold characteristics and the threshold voltage is observed for device widths smaller than 1 μm. In addition a change of the birds beak length with the active area width results in a nonlinear dependence of the gain factor.</description><subject>Area measurement</subject><subject>Birds</subject><subject>Charge measurement</subject><subject>Current measurement</subject><subject>Gain measurement</subject><subject>Length measurement</subject><subject>MOSFETs</subject><subject>Nanoscale devices</subject><subject>Programmable logic arrays</subject><subject>Shape measurement</subject><isbn>9780387510002</isbn><isbn>0387510001</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1989</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjc1KAzEYRQMiKHWeQBfZuogm-fLzZSlD1UJrF-1-yC9GbCuZkeLbO6CrezlcziXkTvAHwbl9dBYZMKMk0xKEYmqQ4oJ0M-aAVs8bLq9IN44fc-NKC4lwTe7ffGunMzvXNL3TZSk5TiOtR7r7Doca2-lIN9sdXfXjDbks_nPM3X8uyP55ue9f2Xr7suqf1qwiTvO30CHGZD0HgSYAGikMOJtAF6NSUi5iDsJpF4VyuUCA4gGDKRJiQFiQ2z9tzTkPX60efPsZtAJjtIVfr5M-xQ</recordid><startdate>198909</startdate><enddate>198909</enddate><creator>Klaassen, F.M.</creator><creator>van der Plas, P.A.</creator><creator>Debets, R.J.W.</creator><creator>Wils, N.A.H.</creator><creator>Pitt, M.G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>198909</creationdate><title>Narrow-width Effects in Submicron MOS ICs</title><author>Klaassen, F.M. ; van der Plas, P.A. ; Debets, R.J.W. ; Wils, N.A.H. ; Pitt, M.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i88t-5215bccd7a03186b386216397d35f64dd49c8eb1959c149ef3b3fa38b6f23cb83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Area measurement</topic><topic>Birds</topic><topic>Charge measurement</topic><topic>Current measurement</topic><topic>Gain measurement</topic><topic>Length measurement</topic><topic>MOSFETs</topic><topic>Nanoscale devices</topic><topic>Programmable logic arrays</topic><topic>Shape measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Klaassen, F.M.</creatorcontrib><creatorcontrib>van der Plas, P.A.</creatorcontrib><creatorcontrib>Debets, R.J.W.</creatorcontrib><creatorcontrib>Wils, N.A.H.</creatorcontrib><creatorcontrib>Pitt, M.G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Klaassen, F.M.</au><au>van der Plas, P.A.</au><au>Debets, R.J.W.</au><au>Wils, N.A.H.</au><au>Pitt, M.G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Narrow-width Effects in Submicron MOS ICs</atitle><btitle>ESSDERC '89: 19th European Solid State Device Research Conference</btitle><stitle>ESSDERC</stitle><date>1989-09</date><risdate>1989</risdate><spage>105</spage><epage>108</epage><pages>105-108</pages><isbn>9780387510002</isbn><isbn>0387510001</isbn><abstract>The effects of an (almost) birds beak free LOCOS isolation configuration on the charactcristics of narrow-width MOSFETs has been investigated by 2-D device simulation and measurements of realized structures. Owing to the occurrence of excess inversion charge peaks at the LOCOS corners, an anomalous behaviour of the subthreshold characteristics and the threshold voltage is observed for device widths smaller than 1 μm. In addition a change of the birds beak length with the active area width results in a nonlinear dependence of the gain factor.</abstract><pub>IEEE</pub><doi>10.1007/978-3-642-52314-4_21</doi><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 9780387510002 |
| ispartof | ESSDERC '89: 19th European Solid State Device Research Conference, 1989, p.105-108 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Area measurement Birds Charge measurement Current measurement Gain measurement Length measurement MOSFETs Nanoscale devices Programmable logic arrays Shape measurement |
| title | Narrow-width Effects in Submicron MOS ICs |
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