Narrow-width Effects in Submicron MOS ICs

Narrow-width Effects in Submicron MOS ICs

The effects of an (almost) birds beak free LOCOS isolation configuration on the charactcristics of narrow-width MOSFETs has been investigated by 2-D device simulation and measurements of realized structures. Owing to the occurrence of excess inversion charge peaks at the LOCOS corners, an anomalous...

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Hauptverfasser: Klaassen, F.M., van der Plas, P.A., Debets, R.J.W., Wils, N.A.H., Pitt, M.G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Area measurement
Birds
Charge measurement
Current measurement
Gain measurement
Length measurement
MOSFETs
Nanoscale devices
Programmable logic arrays
Shape measurement
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Zusammenfassung:The effects of an (almost) birds beak free LOCOS isolation configuration on the charactcristics of narrow-width MOSFETs has been investigated by 2-D device simulation and measurements of realized structures. Owing to the occurrence of excess inversion charge peaks at the LOCOS corners, an anomalous behaviour of the subthreshold characteristics and the threshold voltage is observed for device widths smaller than 1 μm. In addition a change of the birds beak length with the active area width results in a nonlinear dependence of the gain factor.
DOI:10.1007/978-3-642-52314-4_21