High Speed Ga0.47 In0.53 As MISFETs Grown by Metal Organic Vapor Phase Epitaxy

High Speed Ga0.47 In0.53 As MISFETs Grown by Metal Organic Vapor Phase Epitaxy

MISFETs with SiO 2 insulator have been successfully fabricated on MOVPE grown Ga 0.47 In 0.53 As layers on s.i. InP substrate. The devices show a very high extrinsic transconductance of 250 mS/mm and 300 mS/mm for a gate length of 3 μm and 1.5 μm, respectively, The current gain cutoff frequency is 6...

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Bibliographische Detailangaben
Hauptverfasser: SplettstoBer, J., Schulte, F., Trasser, A., Schmitz, D., Beneking, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cutoff frequency
Delay
Epitaxial growth
Epitaxial layers
Indium phosphide
Insulation
Inverters
MISFETs
Time measurement
Transconductance
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Zusammenfassung:MISFETs with SiO 2 insulator have been successfully fabricated on MOVPE grown Ga 0.47 In 0.53 As layers on s.i. InP substrate. The devices show a very high extrinsic transconductance of 250 mS/mm and 300 mS/mm for a gate length of 3 μm and 1.5 μm, respectively, The current gain cutoff frequency is 6 GHz and 16 GHz for a gate length of 3 um and 1,5 um, respectively. A corresponding response time of 130 ps and 70 ps is measured. Fabricated inverters in p- GaInAs show a voltage amplification of -7 for a supply bias of 5 V.