Plasma Anodization of Silicides

We summarize here, our present understanding on the mechanisms of formation of oxide films grown on silicides by room temperature plasma anodization. The studies of the oxygen ions and cations transport processes during the plasma oxide growth on silicides of various refractory metals (Zr, Hf or Ta) and rare earths (Gd, Sm) were carried out using a combination of nuclear reaction analysis, Rutherford backscattering spectrometry and 180 isotopic tracing experiments. To explain the results on ionic migration, we propose a model based on a ``place exchange mechanism'' in which molecular entities exchange their position during oxide growth.