Analysis of Nonuniformly Doped SOI MOSFETs

Analysis of Nonuniformly Doped SOI MOSFETs

A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFET's which allows to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation paramet...

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Hauptverfasser: Paelinck, P., Vancauwenberghe, O., Van de Wiele, F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Boron
Doping
Electric variables
Impedance
Impurities
Interface states
Leakage current
MOS devices
MOSFETs
Threshold voltage
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creator Paelinck, P.
Vancauwenberghe, O.
Van de Wiele, F.
description A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFET's which allows to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation parameters. Comparison with experimental results is presented.
format Conference Proceeding
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ispartof ESSDERC '87: 17th European Solid State Device Research Conference, 1987, p.307-310
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Boron
Doping
Electric variables
Impedance
Impurities
Interface states
Leakage current
MOS devices
MOSFETs
Threshold voltage
title Analysis of Nonuniformly Doped SOI MOSFETs
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