Analysis of Nonuniformly Doped SOI MOSFETs

Analysis of Nonuniformly Doped SOI MOSFETs

A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFET's which allows to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation paramet...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Paelinck, P., Vancauwenberghe, O., Van de Wiele, F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Boron
Doping
Electric variables
Impedance
Impurities
Interface states
Leakage current
MOS devices
MOSFETs
Threshold voltage
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Beschreibung
Zusammenfassung:A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFET's which allows to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation parameters. Comparison with experimental results is presented.