3D Integration of GaAs MESFET and varactor diode for a VCO-MMIC

3D Integration of GaAs MESFET and varactor diode for a VCO-MMIC

For the optimization of MESFET and varactor diode in a monolithic microwave integrated circuit (MMIC) different epitaxial layer structures are required. We report on the 3-d integration of the different devices by stacking the specific layers upon each other. DC and RF performances of the integrated...

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Bibliographische Detailangaben
Hauptverfasser: Joseph, M., Roth, B., Scheffer, F., Meschede, H., Beyer, A., Helme, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Diodes
Gallium arsenide
MESFET integrated circuits
Microwave devices
Microwave FET integrated circuits
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Varactors
Voltage-controlled oscillators
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Zusammenfassung:For the optimization of MESFET and varactor diode in a monolithic microwave integrated circuit (MMIC) different epitaxial layer structures are required. We report on the 3-d integration of the different devices by stacking the specific layers upon each other. DC and RF performances of the integrated FET are improved introducing an insulating layer sequence. A voltage controlled oscillator (VCO) has been realized with the first design for a frequency of oscillation of 9 GHz.