Electron velocity overshoot in sub-micron silicon MOS transistors
A l-D non-stationary hydrodynamic transport model is presented. Simulation results of n + -n-n + drift devices using this model are compared with results using a Monte Carlo model, and it is shown that it is better not to include the heat flow in the model. Simulations of deep sub-micron NMOS transi...
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| creator | Elias, P J H van de Roer, Th G Klaassen, F M |
| description | A l-D non-stationary hydrodynamic transport model is presented. Simulation results of n + -n-n + drift devices using this model are compared with results using a Monte Carlo model, and it is shown that it is better not to include the heat flow in the model. Simulations of deep sub-micron NMOS transistors show velocity overshoot in the channel. These results are compared with experimental data and a good agreement is found. |
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Simulation results of n + -n-n + drift devices using this model are compared with results using a Monte Carlo model, and it is shown that it is better not to include the heat flow in the model. Simulations of deep sub-micron NMOS transistors show velocity overshoot in the channel. These results are compared with experimental data and a good agreement is found.</description><identifier>ISBN: 9780750300650</identifier><identifier>ISBN: 0750300655</identifier><language>eng</language><publisher>IEEE</publisher><subject>Acoustic scattering ; Effective mass ; Electron mobility ; Hydrodynamics ; Impact ionization ; Monte Carlo methods ; MOSFETs ; Optical scattering ; Semiconductor process modeling ; Silicon</subject><ispartof>ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.145-148</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5436427$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5436427$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Elias, P J H</creatorcontrib><creatorcontrib>van de Roer, Th G</creatorcontrib><creatorcontrib>Klaassen, F M</creatorcontrib><title>Electron velocity overshoot in sub-micron silicon MOS transistors</title><title>ESSDERC '90: 20th European Solid State Device Research Conference</title><addtitle>ESSDERC</addtitle><description>A l-D non-stationary hydrodynamic transport model is presented. Simulation results of n + -n-n + drift devices using this model are compared with results using a Monte Carlo model, and it is shown that it is better not to include the heat flow in the model. Simulations of deep sub-micron NMOS transistors show velocity overshoot in the channel. These results are compared with experimental data and a good agreement is found.</description><subject>Acoustic scattering</subject><subject>Effective mass</subject><subject>Electron mobility</subject><subject>Hydrodynamics</subject><subject>Impact ionization</subject><subject>Monte Carlo methods</subject><subject>MOSFETs</subject><subject>Optical scattering</subject><subject>Semiconductor process modeling</subject><subject>Silicon</subject><isbn>9780750300650</isbn><isbn>0750300655</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1990</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjMtKAzEUQAMiKHW-wE1-YOAmN3eSWZZSH1Dpwu5LmgdGphNJYqF_74iezdkczg3rRm1AEyDAQHDHulo_YUGRkEbes_V2Cq6VPPNLmLJL7crzJZT6kXPjaeb1-9Sfk_sNapqSW_y2f-et2Lmm2nKpD-w22qmG7t8rdnjaHjYv_W7__LpZ7_o0QuujpOgDqpNAYTCaYCMFE8kgSYTRKjJShhBQODICvAZ0lrx3avTgBo0r9vi3TUt1_CrpbMv1SAoHJTX-AMMHQ4s</recordid><startdate>199009</startdate><enddate>199009</enddate><creator>Elias, P J H</creator><creator>van de Roer, Th G</creator><creator>Klaassen, F M</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>199009</creationdate><title>Electron velocity overshoot in sub-micron silicon MOS transistors</title><author>Elias, P J H ; van de Roer, Th G ; Klaassen, F M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-f25fde34b13183f8eaf5e8f58352309a45822eee31c5810d703ca5ddc49d0c673</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Acoustic scattering</topic><topic>Effective mass</topic><topic>Electron mobility</topic><topic>Hydrodynamics</topic><topic>Impact ionization</topic><topic>Monte Carlo methods</topic><topic>MOSFETs</topic><topic>Optical scattering</topic><topic>Semiconductor process modeling</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Elias, P J H</creatorcontrib><creatorcontrib>van de Roer, Th G</creatorcontrib><creatorcontrib>Klaassen, F M</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Elias, P J H</au><au>van de Roer, Th G</au><au>Klaassen, F M</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electron velocity overshoot in sub-micron silicon MOS transistors</atitle><btitle>ESSDERC '90: 20th European Solid State Device Research Conference</btitle><stitle>ESSDERC</stitle><date>1990-09</date><risdate>1990</risdate><spage>145</spage><epage>148</epage><pages>145-148</pages><isbn>9780750300650</isbn><isbn>0750300655</isbn><abstract>A l-D non-stationary hydrodynamic transport model is presented. Simulation results of n + -n-n + drift devices using this model are compared with results using a Monte Carlo model, and it is shown that it is better not to include the heat flow in the model. Simulations of deep sub-micron NMOS transistors show velocity overshoot in the channel. These results are compared with experimental data and a good agreement is found.</abstract><pub>IEEE</pub><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 9780750300650 |
| ispartof | ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.145-148 |
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| language | eng |
| recordid | cdi_ieee_primary_5436427 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Acoustic scattering Effective mass Electron mobility Hydrodynamics Impact ionization Monte Carlo methods MOSFETs Optical scattering Semiconductor process modeling Silicon |
| title | Electron velocity overshoot in sub-micron silicon MOS transistors |
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