Electron velocity overshoot in sub-micron silicon MOS transistors

Electron velocity overshoot in sub-micron silicon MOS transistors

A l-D non-stationary hydrodynamic transport model is presented. Simulation results of n + -n-n + drift devices using this model are compared with results using a Monte Carlo model, and it is shown that it is better not to include the heat flow in the model. Simulations of deep sub-micron NMOS transi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Elias, P J H, van de Roer, Th G, Klaassen, F M
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Acoustic scattering
Effective mass
Electron mobility
Hydrodynamics
Impact ionization
Monte Carlo methods
MOSFETs
Optical scattering
Semiconductor process modeling
Silicon
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Beschreibung
Zusammenfassung:A l-D non-stationary hydrodynamic transport model is presented. Simulation results of n + -n-n + drift devices using this model are compared with results using a Monte Carlo model, and it is shown that it is better not to include the heat flow in the model. Simulations of deep sub-micron NMOS transistors show velocity overshoot in the channel. These results are compared with experimental data and a good agreement is found.