Unified model of the enhancement-mode MOS transistor

A new unified fully analytical dc model of the enhancement-mode uniformly doped MOS transistor resulting from a wide device-physics-oriented theoretical analysis. The model deals with the triode and saturation region of the transistor operation as a whole, and its validity is preserved for the long-...

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Bibliographische Detailangaben
1. Verfasser: Kordalski, W J
Format: Tagungsbericht
Sprache:eng
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Beschreibung
Zusammenfassung:A new unified fully analytical dc model of the enhancement-mode uniformly doped MOS transistor resulting from a wide device-physics-oriented theoretical analysis. The model deals with the triode and saturation region of the transistor operation as a whole, and its validity is preserved for the long- and short-channel MOS transistors.