Unified model of the enhancement-mode MOS transistor
A new unified fully analytical dc model of the enhancement-mode uniformly doped MOS transistor resulting from a wide device-physics-oriented theoretical analysis. The model deals with the triode and saturation region of the transistor operation as a whole, and its validity is preserved for the long-...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | A new unified fully analytical dc model of the enhancement-mode uniformly doped MOS transistor resulting from a wide device-physics-oriented theoretical analysis. The model deals with the triode and saturation region of the transistor operation as a whole, and its validity is preserved for the long- and short-channel MOS transistors. |
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