Leakage Current in Polysilicon TFTs: Experiments and Interpretation

Leakage Current in Polysilicon TFTs: Experiments and Interpretation

Polycrystalline silicon thin-film transistors (poly-TFTs) are getting more and more attractive for Active-Matrix Liquid Crystal Displays (AMLCDs) and, more generally, for large-area electronic products. Anomalously high off-currents, however, are an important limiting factor preventing a wide use of...

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Bibliographische Detailangaben
Hauptverfasser: Colalongo, L., Valdinoci, M., Baccarani, G., Migliorato, P., Tallarida, G., Reita, C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Active matrix liquid crystal displays
Active matrix technology
Electron emission
Electron traps
Leakage current
Silicon
Temperature dependence
Thin film transistors
Tunneling
Voltage
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Zusammenfassung:Polycrystalline silicon thin-film transistors (poly-TFTs) are getting more and more attractive for Active-Matrix Liquid Crystal Displays (AMLCDs) and, more generally, for large-area electronic products. Anomalously high off-currents, however, are an important limiting factor preventing a wide use of poly-TFTs. The purpose of this work is that of investigating the anomalously large leakage-currents in (poly-TFTs) by numerical simulation, taking into account the effect of energy-distributed traps and field-enhanced generation mechanisms.