Increased Current Gain and Reduced Emitter Resistance in Sige HBTs by Fluorine Or Chlorine Implantation into a Polysilicon Emitter Contact

This paper shows that fluorine implantation can be used to reduce the emitter resistance in a polysilicon emitter contact using a thermal budget that is compatible with SiGe technology. The influence of fluorine and chlorine on the base current is also investigated and it is shown that suppression b...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Schiz, J., Moiseiwitsch, N.E., Marsh, C.D., Ashburn, P., Booker, G.R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Area measurement Contact resistance Electrical resistance measurement Germanium silicon alloys Implants Silicon germanium Surface resistance Temperature Thermal resistance
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