Increased Current Gain and Reduced Emitter Resistance in Sige HBTs by Fluorine Or Chlorine Implantation into a Polysilicon Emitter Contact

Increased Current Gain and Reduced Emitter Resistance in Sige HBTs by Fluorine Or Chlorine Implantation into a Polysilicon Emitter Contact

This paper shows that fluorine implantation can be used to reduce the emitter resistance in a polysilicon emitter contact using a thermal budget that is compatible with SiGe technology. The influence of fluorine and chlorine on the base current is also investigated and it is shown that suppression b...

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Hauptverfasser: Schiz, J., Moiseiwitsch, N.E., Marsh, C.D., Ashburn, P., Booker, G.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Area measurement
Contact resistance
Electrical resistance measurement
Germanium silicon alloys
Implants
Silicon germanium
Surface resistance
Temperature
Thermal resistance
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Zusammenfassung:This paper shows that fluorine implantation can be used to reduce the emitter resistance in a polysilicon emitter contact using a thermal budget that is compatible with SiGe technology. The influence of fluorine and chlorine on the base current is also investigated and it is shown that suppression by a factor of ~7 can be obtained in some circumstances.