Platinum Etching in an Inductively Coupled Plasma

Inductively coupled plasma as a high density plasma source and Cl 2 as main process gas are tested for etching of Pt thin films. Optical emission spectra show the possible compound formation of Pt with Cl, which is an evidence of ion-assisted chemical reaction. Addition of oxygen to Cl 2 plasma enha...

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Hauptverfasser: Park, S.-G., Lee, J. G., Choi, Y. S., Lee, S. H., Yoo, W. J., Jung, C. O., Koh, Y. B., Lee, M. Y.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Inductively coupled plasma as a high density plasma source and Cl 2 as main process gas are tested for etching of Pt thin films. Optical emission spectra show the possible compound formation of Pt with Cl, which is an evidence of ion-assisted chemical reaction. Addition of oxygen to Cl 2 plasma enhances the selectivity to hard SiO 2 mask to more than 2.0 while maintaining Pt etch rate higher than 200 nm/min. Patterning of half micron Pt lines is demonstrated.