Double-Poly EEPROM Cell for High Density Memories using Positive and Negative Voltage Programming

Double-Poly EEPROM Cell for High Density Memories using Positive and Negative Voltage Programming

This paper will present a very compact EEPROM cell for high density applications, featuring split voltage programming. The information is stored in a self-aligned floating-gate transistor with thin (8nm) tunnel oxide. Bit selection is performed by a low-voltage transitor. Long endurance (more than 1...

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Bibliographische Detailangaben
Hauptverfasser: Pio, F., Paruzzi, P., Baldi, L., Riva, C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Character generation
CMOS technology
Dielectrics
Electron traps
EPROM
Microelectronics
Nonvolatile memory
Research and development
Stress
Voltage control
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Beschreibung
Zusammenfassung:This paper will present a very compact EEPROM cell for high density applications, featuring split voltage programming. The information is stored in a self-aligned floating-gate transistor with thin (8nm) tunnel oxide. Bit selection is performed by a low-voltage transitor. Long endurance (more than 10 6 cycles) is achieved and the asymmetric window closing will be explained. The innovative cell concept has been validated on a 256k parallel EEPROM device.