Facet heating in high power GaAlAs/GaAs edge emitting laser diodes

Facet heating in high power GaAlAs/GaAs edge emitting laser diodes

A self consistent model based on the simultaneous solution of the photon rate equations taking into account the diffusion equation for the carriers and the heat conduction equation is used to calculate facet temperatures in GaAlAs/GaAs QW-GRINSCH lasers. We investigated the influence of injection cu...

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Bibliographische Detailangaben
Hauptverfasser: Menzel, U., Puchert, R., Barwolff, A., Lau, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier density
Diode lasers
Equations
Gallium arsenide
Heating
Laser modes
Reflectivity
Spontaneous emission
Surface emitting lasers
Temperature distribution
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Zusammenfassung:A self consistent model based on the simultaneous solution of the photon rate equations taking into account the diffusion equation for the carriers and the heat conduction equation is used to calculate facet temperatures in GaAlAs/GaAs QW-GRINSCH lasers. We investigated the influence of injection current and surface recombination velocity on the facet heating. The calculated axial carrier density, photon density and temperature distributions for different injection currents and facet reflectivities are discussed. The calculated facet temperatures are compared with temperatures determined by micro-Raman spectroscopy.