Physics of AlGaAs/InGaAs/GaAs heterostructures for high performance magnetic sensors

The interest of AlGaAs/InGaAs/GaAs heterostructures for the realization of Hall effect magnetic sensors with a high sensitivity and a low thermal drift has been investigated. The physical phenomena responsible for the thermal drift of the Hall sensitivity were reviewed and investigated using a set o...

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Bibliographische Detailangaben
Hauptverfasser:	Mosser, V., Contreras, S., Aboulhouda, S., Lorenzini, Ph, Kobbi, F., Robert, J. L., Zekentes, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Doping Electrons Gallium arsenide Indium gallium arsenide Magnetic sensors Photonic band gap Physics Poisson equations Temperature sensors Testing
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Zusammenfassung:	The interest of AlGaAs/InGaAs/GaAs heterostructures for the realization of Hall effect magnetic sensors with a high sensitivity and a low thermal drift has been investigated. The physical phenomena responsible for the thermal drift of the Hall sensitivity were reviewed and investigated using a set of test devices with well-controlled structure parameters. These results were used to optimize the structure design. A sensitivity of 900 V/A/T with a temperature coefficient of -160 ppm/°C was obtained.