Reduced Hot Electron Degradation Using Delta-Doped MOSFETs

Reduced Hot Electron Degradation Using Delta-Doped MOSFETs

Reliability measurements have been carried out on n-channel delta- doped MOSFETs incorporating an anodic gate oxide. The threshold voltage shifts induced in these devices when stressed for up to 10 5 seconds is compared with that observed for control devices fabricated on plain wafers. The delta-dop...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wood, A. C. G., O'Neill, A. G., Phillips, P. J., Whall, T. E., Parker, E. H. C., Taylor, S., Gundlach, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
Electrons
Equations
Hot carrier injection
Impact ionization
Lead compounds
MOSFETs
Scattering
Temperature
Threshold voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Reliability measurements have been carried out on n-channel delta- doped MOSFETs incorporating an anodic gate oxide. The threshold voltage shifts induced in these devices when stressed for up to 10 5 seconds is compared with that observed for control devices fabricated on plain wafers. The delta-doped devices show a reduced threshold voltage shift indicating a reduction in oxide damage for these devices. The anodic oxide appears to be less susceptible to damage than a conventional oxide.