Low Frequency Noise and Excess Currents Due to Trap-Assisted Tunneling in Double Barrier Resonant Tunneling Diodes

Low Frequency Noise and Excess Currents Due to Trap-Assisted Tunneling in Double Barrier Resonant Tunneling Diodes

Low frequency noise and excess currents in InP and GaAs-based double barrier (DB) resonant tunneling diodes (RTDs) are described. Correlations between noise measurements and static characteristics of the DB RTDs, and a theoretical explanation for both noise and d.c. characteristics based on trap-ass...

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Bibliographische Detailangaben
1. Verfasser: Deen, M. J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
1f noise
Circuit noise
Diodes
Low-frequency noise
Noise measurement
Noise shaping
Optical noise
Resonant tunneling devices
Semiconductor device noise
Voltage
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Zusammenfassung:Low frequency noise and excess currents in InP and GaAs-based double barrier (DB) resonant tunneling diodes (RTDs) are described. Correlations between noise measurements and static characteristics of the DB RTDs, and a theoretical explanation for both noise and d.c. characteristics based on trap-assisted tunneling (TAT) is presented. It is shown that devices with low peak-to-valley current ratios (PVCRs) have generation-recombination (g-r), flicker and shot noise present in their noise spectra, but devices with higher PVCRs, on the other hand, have only flicker and shot noise spectra.